STY25NA60 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET

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STY25NA60
N - CHANNEL 600V - 0.225Ω - 25 A - Max247
EXSTREMELY LOW GATE CHARGE POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STY25NA60
600 V < 0.24 Ω 25 A
s TYPICAL RDS(on) = 0.225 Ω
s EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
The Max247™ package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to acco-
modate much larger silicon chips, normally sup-
plied in bigger packages such as TO-264.The in-
creased die capacity makes the device idealto re-
duce component count in multiple paralleled de-
signs and save board space with respect to larger
packages.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Drain- gat e Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating F actor
Ts tg Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
March 1999
3
2
1
Max247™
INTERNAL SCHEMATIC DIAGRAM
Va l u e
600
600
± 30
25
1 6 .5
100
300
2 .4
-55 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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