STY15NA100 Datasheet, PDF (1/4 Pages) STMicroelectronics – N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET

STY15NA100
N - CHANNEL 1000V - 0.65 Ω - 15A - Max247
MOSFET
TYPE
STY15NA100
VDSS
1000 V
RDS(on)
< 0.77 Ω
ID
15 A
s TYPICAL RDS(on) = 0.65 Ω
s EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s ± 30V GATE TO SOURCE VOLTAGE RATING
s REPETITIVE AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max247^TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
PRELIMINARY DATA
3
2
1
Max247^TM
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 1998
Value
1000
1000
± 30
15
9.5
60
300
2.4
-55 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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