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| STY140NS10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.009 ohm - 140A MAX247™ MESH OVERLAY™ POWER MOSFET | |||
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STY140NS10
N-CHANNEL 100V - 0.009 ⦠- 140A MAX247â¢
MESH OVERLAY⢠POWER MOSFET
TYPE
VDSS
RDS(on)
STY140NS10
100V <0.011â¦
s TYPICAL RDS(on) = 0.009â¦
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
ID
140A
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢
process, STMicroelectronics has designed an advanced
family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Companyâs proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SWITCH MODE POWER SUPPLY (SMPS)
3
2
1
Max247â¢
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM(â¢) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
EAS(1) Single Pulse Avalanche Energy
dv/dt (2) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(â¢) Pulse width limited by safe operating area.
August 2001
.
Value
Unit
100
V
100
V
± 20
V
140
A
99
A
560
A
450
W
3
W/°C
2900
mJ
5
V/ns
-55 to 175
°C
-55 to 175
°C
(1) Starting Tj = 25 oC, ID = 70A, VDD= 50V
(2) ISD â¤140A, di/dt â¤200A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
1/8
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