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STY100NS20FD_06 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY™ Power MOSFET | |||
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STY100NS20FD
N-channel 200V - 0.022⦠- 100A - Max247
MESH OVERLAY⢠Power MOSFET
General features
Type
STY100NS20FD
VDSS
200V
RDS(on)
<0.024â¦
ID
100A
â Extremely high dv/dt capability
â 100% avalanche tested
â Gate charge minimized
â ± 20V gate to source voltage rating
â Low intrinsic capacitance
â Fast body-drain diode:low trr, Qrr
Description
Using the latest high voltage MESH OVERLAYâ¢
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Companyâs
proprietary edge termination structure, gives the
lowest RDS(ON) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Applications
â Switching application
3
2
1
Max247
Internal schematic diagram
Order codes
Part number
STY100NS20FD
Marking
Y100NS20FD
Package
Max247
Packaging
Tube
May 2006
Rev 3
1/12
www.st.com
12
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