STY100NM60N Datasheet, PDF (1/13 Pages) STMicroelectronics – Low input capacitance and gate charge

STY100NM60N
Features
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II
Power MOSFET in a Max247 package
Datasheet — production data
Type
STY100NM60N
V_DSS
@ T_Jmax
650 V
R_DS(on) max
< 0.029 Ω
I_D
98 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
Max247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STY100NM60N
Marking
100NM60N
Package
Max247
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 022225 Rev 2
1/13
www.st.com
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