STX8NM60N Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

STx8NM60N
N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK, D²PAK
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
max
I_D
STB8NM60N
STD8NM60N
STD8NM60N-1
STF8NM60N
STP8NM60N
650 V
650 V
650 V
650 V
650 V
< 0.65 Ω
< 0.65 Ω
< 0.65 Ω
< 0.65 Ω
< 0.65 Ω
7A
7A
7A
7 A⁽¹⁾
7A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1. Device summary
Order codes
STB8NM60N
STD8NM60N
STD8NM60N-1
STF8NM60N
STP8NM60N
Marking
B8NM60N
D8NM60N
D8NM60N
F8NM60N
P8NM60N
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
D²PAK
DPAK
IPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
November 2008
Rev 3
1/19
www.st.com
19