STX83003 Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
STX83003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s ST83003 SILICON IN TO-92 PACKAGE
s MEDIUM VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX93003, its
complementary PNP transistor.
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage
(IC = 0, IB = 0.5 A, tp < 10µs, Tj < 150^oC)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at TC = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
October 2002
Value
700
400
V(BR)EBO
1
3
0.5
1.5
1.5
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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