STX6NM60N Datasheet, PDF (1/19 Pages) STMicroelectronics – Low input capacitance and gate charge

STx6NM60N
N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK, D²PAK
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
max
I_D
STB6NM60N
t(s) ^STD6NM60N
c ^STD6NM60N-1
u _STF6NM60N
rod ^STP6NM60N
650 V
650 V
650 V
650 V
650 V
< 0.92 Ω
< 0.92 Ω
< 0.92 Ω
< 0.92 Ω
< 0.92 Ω
4.6 A
4.6 A
4.6 A
4.6 A ⁽¹⁾
4.6 A
P 1. Limited only by maximum temperature allowed
te ^{■ 100% avalanche tested}
le _{■ Low input capacitance and gate charge}
so ^{■ Low gate input resistance}
Ob _Application
) ^- _{■ Switching applications}
ct(s _Description
du _{This series of devices implements second}
ro _{generation MDmesh™ technology. This}
P _{revolutionary Power MOSFET associates a new}
te ^{vertical structure to the STMicroelectronics’ strip}
le ^{layout to yield one of the world’s lowest on-}
resistance and gate charge. It is therefore suitable
so for the most demanding high-efficiency
Ob^converters.
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220FP
3
2
1
IPAK
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB6NM60N
STD6NM60N-1
STD6NM60N
STF6NM60N
STP6NM60N
Marking
B6NM60N
D6NM60N
D6NM60N
F6NM60N
P6NM60N
Package
D²PAK
IPAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tape and reel
Tube
Tube
January 2009
Rev 3
1/19
www.st.com
19