STX30NM60ND Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STx30NM60ND
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET
(with fast diode) TO-220, TO-220FP, D²PAK, I²PAK, TO-247
Features
Type
V_DSS @T_J
max
R_DS(on)
max
I_D
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
650 V
0.13 Ω
25 A
25 A
25 A⁽¹⁾
25 A
25 A
1. Limited only by maximum temperature allowed
■ The world’s best R_DS(on) in TO-220 amongst
the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.
Table 1. Device summary
Order codes
Marking
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
30NM60ND
I²PAK
12³
TO-247
3
2
1
3
D²PAK ¹
3
TO-220
2
1
3
2
TO-220FP ¹
Figure 1. Internal schematic diagram
$
'
3
!-V
It is therefore strongly recommended for bridge
topologies, in particular ZVS phase-shift
converters.
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
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November 2008
Rev 2
1/18
www.st.com
18