STX23NM60ND_10 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247

STx23NM60ND
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247
Features
Type
STx23NM60ND
V_DSS
(@T_jmax)
650 V
R_DS(on)
max.
< 0.180 Ω
I_D
19.5 A
■ The worldwide best R_DS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with a n intrinsic
fast-recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Part number
STB23NM60ND
STI23NM60ND
STF23NM60ND
STP23NM60ND
STW23NM60ND
Marking
23NM60ND
23NM60ND
23NM60ND
23NM60ND
23NM60ND
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 14367 Rev 3
1/18
www.st.com
18