STX11NM60N Datasheet, PDF (1/20 Pages) STMicroelectronics – N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

STx11NM60N
N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, I²PAK, IPAK, DPAK, D²PAK
Features
Type
V_DSS
(@T_Jmax)
STB11NM60N-1
STB11NM60N
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650 V
650 V
650 V
650 V
650 V
650 V
R_DS(on)
max
0.45 Ω
0.45 Ω
0.45 Ω
0.45 Ω
0.45 Ω
0.45 Ω
I_D
10 A
10 A
10 A
10 A
10 A⁽¹⁾
10 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
123
I²PAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB11NM60N-1
STB11NM60N
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
B11NM60N
11NM60N
D11NM60N
D11NM60N
P11NM60N
F11NM60N
March 2009
Rev 5
Package
I²PAK
D²PAK
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape and reel
Tube
Tape and reel
Tube
Tube
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