STWA48N60M2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge

STWA48N60M2
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2
Power MOSFET in a TO-247 long leads package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STWA48N60M2
VDS @ TJmax
650 V
RDS(on) max
0.07 Ω
ID
42 A
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STWA48N60M2
Table 1: Device summary
Marking
Package
48N60M2
TO-247 long leads
Packaging
Tube
December 2015
DocID028710 Rev 1
This is information on a product in full production.
1/12
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