STWA40N95K5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Ultra low gate charge

STWA40N95K5
N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5
Power MOSFET in a TO-247 long leads package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STWA40N95K5
VDS
950 V
RDS(on) max
0.130 Ω
ID
38 A
PTOT
450 W
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STWA40N95K5
AM01476v1
Table 1: Device summary
Marking
Package
40N95K5
TO-247
Packaging
Tube
August 2015
DocID028207 Rev 1
This is information on a product in full production.
1/13
www.st.com