STWA20N95K5 Datasheet, PDF (1/12 Pages) STMicroelectronics – Ultra low gate charge

STWA20N95K5
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH™ 5 Power MOSFET
in TO-247 long leads package
Datasheet - preliminary data
Features
3
2
1
TO-247 long leads
Figure 1. Internal schematic diagram
D(2)
G(1)
Order codes
V_DSS
R_DS(on)
max
I_D
P_W
STWA20N95K5 950 V 0.330 Ω 17.5 A 250 W
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
S(3)
AM01476v1
Order codes
STWA20N95K5
Table 1. Device summary
Marking
Package
20N95K5
TO-247 long leads
Packaging
Tube
November 2013
DocID025573 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
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