STW9NK95Z Datasheet, PDF (1/12 Pages) STMicroelectronics – Gate charge minimized

STW9NK95Z
N-channel 950 V - 1.15 Ω - 7 A - TO-247
Zener-protected SuperMESH^TM Power MOSFET
Features
Type
STW9NK95Z
V_DSS
R_DS(on)
Max
I_D
950 V < 1.38 Ω 7 A
Pw
160 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STW9NK95Z
Marking
9NK95Z
Package
TO-247
Packaging
Tube
July 2008
Rev 2
1/12
www.st.com
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