STW9NC80Z Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™III MOSFET

STW9NC80Z
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW9NC80Z
800 V
<0.9Ω
9.4 A
n TYPICAL R_DS(on) = 0.82Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n GATE-TO-SOURCE ZENER DIODES
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
TO-247
APPLICATIONS
n SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS
Drain-source Voltage (V_GS = 0)
800
V
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
800
V
V_GS
Gate- source Voltage
±25
V
I_D
Drain Current (continuous) at T_C = 25°C
9.4
A
I_D
Drain Current (continuous) at T_C = 100°C
5.9
A
I_DM (1)
Drain Current (pulsed)
38
A
P_TOT
Total Dissipation at T_C = 25°C
190
W
Derating Factor
1.52
W/°C
I_GS
Gate-source Current
±50
mA
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
4
KV
dv/dt(q)
Peak Diode Recovery voltage slope
3
V/ns
V_ISO
Insulation Winthstand Voltage (DC)
--
V
T_stg
Storage Temperature
–65 to 150
°C
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
150
°C
(1)I_SD ≤9.4A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
September 2002
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