STW9NA80 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

STW9NA80
®
STH9NA80FI
N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
S TW 9NA8 0
STH9NA80FI
V _DSS
800 V
800 V
R_DS(on)
< 1.0 Ω
< 1.0 Ω
I_D
9.1 A
5.9 A
s TYPICAL RDS(on) = 0.85 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
VGS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
IDM (•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
V_ISO I nsulat ion W ithstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1998
Value
STW9NA80 STH9NA80FI
800
800
± 30
9.1
5.9
6
3.9
36.4
36.4
190
80
1.52
0.64

4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
V
o_C
o_C
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