STW9N150 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH™ Power MOSFET

STW9N150
N-channel 1500V - 2.2Ω - 8A - TO-247
Very high voltage PowerMESH™ Power MOSFET
TARGET SPECIFICATION
General features
Type
STW9N150
V_DSS
1500V
R_DS(on)
< 2.7Ω
■ 100% avalanche tested
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
■ Very low on-resistance
I_D Pw
8A 350W
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R_DS(on) per area, unrivalled gate charge and
switching characteristics.
Applications
■ Switching application
TO-247
Internal schematic diagram
Order code
Part number
STW9N150
Marking
W9N150V
Package
TO-247
Packaging
Tube
May 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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