STW8NC80Z Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH™III MOSFET

STW8NC80Z
N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW8NC80Z
800 V < 1.5 Ω
6.7 A
n TYPICAL R_DS(on) = 1.3 Ω
n EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
n 100% AVALANCHE TESTED
n VERY LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
n SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
n WELDING EQUIPMENT
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
I_GS
Gate-source Current
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)I_SD ≤6.7A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
December 2001
Value
800
800
±25
6.7
4.2
27
160
1.28
±50
3
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
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