STW8NA60 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STW8NA60
®
STH8NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
V _DSS
R_DS(on)
I_D
STW 8NA60
600 V
<1Ω
8A
S TH8NA 60F I
600 V
<1Ω
5A
s TYPICAL RDS(on) = 0.92 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
V_GS G ate-source Volt age
I_D
Drain Current (continuous) at T_c = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
I_DM (•)
P_tot
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
V_ISO I nsulation W ithstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Valu e
ST W8NA60 STH8NA60FI
6 00
6 00
± 30
8
5
5.1
3 .2
32
32
150
60
1.2
0. 48

4000
-65 to 150
1 50
Unit
V
V
V
A
A
A
W
W /^o C
V
o_C
o_C
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