STW80NF55-08 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET™ POWER MOSFET

STW80NF55-08
N-CHANNEL 55V - 0.0065Ω - 80A TO-247
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW80NF55-08
55 V < 0.008 Ω 80 A
s TYPICAL R_DS(on) = 0.0065Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s DC-AC & DC-DC CONVERTERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D (*)
Drain Current (continuous) at T_C = 25°C
I_D
I_DM (l)
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
E_AS (1) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
55
55
±20
80
80
320
300
2
870
–65 to 175
175
(1) Starting T_j = 25°C, I_D = 40A, V_DD = 40V
(*) Current Limited by wire bonding
September 2002
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
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