STW80NF10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET™ POWER MOSFET

STW80NF10
N-CHANNEL 100V - 0.012Ω - 80A TO-247
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW80NF10
100 V < 0.015 Ω 80 A
s TYPICAL R_DS(on) = 0.012Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D (*)
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(*) Limited by wire bonding
April 2001
Value
100
100
±20
80
50
320
300
2
9
245
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C
(1) I_SD ≤80A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(2) Starting Tj = 25°C, ID = 80A, VDD = 50V
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