STW80NE06-10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 60V - 0.0085ohm - 80A - TO-247 STripFET POWER MOSFET

®
STW80NE06-10
N - CHANNEL 60V - 0.0085Ω - 80A - TO-247
STripFET™ ” POWER MOSFET
T Y PE
V _DSS
R_DS(on)
ST W80NE06-10 60 V <0.01 Ω
s TYPICAL R_DS(on) = 0.0085 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
I_D
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™ ” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
ID
ID
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM ( •)
P_tot
Drain Current (pulsed)
Tot al Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
Value
Uni t
60
V
60
V
± 20
V
80
A
57
A
320
A
200
1.33
W
W/^oC
7
V/ ns
-65 to 175
o_C
175
o_C
(1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8