STW7NA100 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STW7NA100
STH7NA100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
STW7NA100
STH7NA100FI
VDSS
1000 V
1000 V
RDS(on)
< 1.7 Ω
< 1.7 Ω
ID
7A
4.3 A
s TYPICAL RDS(on) = 1.45 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s GATE CHARGE MINIMISED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
3
2
1
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1998
Value
STW7NA100 STH7NA100FI
1000
1000
± 30
7
4.3
4.4
2.7
28
28
190
70
1.52
0.56

4000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
V
o_C
o_C
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