STW72N60DM2AG Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STW72N60DM2AG
Automotive N-channel 600 V, 0.037 Ω typ., 68 A MDmesh™
DM2 Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)
max.
ID
STW72N60DM2AG 600 V 0.042 Ω 68 A
PTOT
446 W
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW72N60DM2AG
Table 1: Device summary
Marking
72N60DM2
Package
TO-247
Packing
Tube
December 2015
DocID027314 Rev 4
This is information on a product in full production.
1/12
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