STW70N60M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Excellent output capacitance

STW70N60M2
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2
Power MOSFET in a TO-247 package
Datasheet − production data
Features
Order codes V_DS @ T_Jmax R_DS(on) max I_D
STW70N60M2
650 V
0.040 Ω 68 A
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2)
G(1)
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
S(3)
AM01476v1
Order codes
STW70N60M2
Table 1. Device summary
Marking
Package
70N60M2
TO-247
Packaging
Tube
September 2014
This is information on a product in full production.
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