STW6NC90Z Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH™III MOSFET

STW6NC90Z
N-CHANNEL 900V - 2.1Ω - 5.2A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STW6NC90Z
900 V < 2.5 Ω
5.2A
s TYPICAL R_DS(on) = 2.1Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (1) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
I_GS
Gate-source Current (*)
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)I_SD ≤5.2A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
Value
900
900
±25
5.2
3.3
21
160
1.52
±50
4
3
–65 to 150
150
(*) Limited by maximum temperature allowed
October 2000
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
1/8