STW6NA80 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

STW6NA80
®
STH6NA80FI
N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
S TW 6NA8 0
STH6NA80FI
V _DSS
800 V
800 V
R_DS(on)
< 2.2 Ω
< 2.2 Ω
I_D
5.4 A
3.4 A
s TYPICAL R_DS(on) = 1.8 Ω
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
VGS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
IDM (•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
V_ISO I nsulat ion W ithstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1998
Value
STW6NA80 STH6NA80FI
800
800
± 30
5.4
3.4
3.4
2.1
22
22
150
60
1.2
0.48

4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
V
o_C
o_C
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