STW6N90K5 Datasheet, PDF (1/12 Pages) STMicroelectronics – Switching applications

STW6N90K5
N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STW6N90K5
VDS
900 V
RDS(on) max.
ID
1.10 Ω
6A
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STW6N90K5
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
6N90K5
TO-247
Packing
Tube
November 2016
DocID029951 Rev 1
This is information on a product in full production.
1/12
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