STW69N65M5-4 Datasheet, PDF (1/13 Pages) STMicroelectronics – Easy to drive

STW69N65M5-4
N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh™ V Power MOSFET
in a TO247-4 package
Datasheet - production data
2 ³⁴
1
TO247-4
Features
Order code V_DS @ T_Jmax
STW69N65M5-4 710 V
R_DS(on)
max
0.045 Ω
I_D
58 A
• Higher V_DS rating
• Higher dv/dt capability
• Excellent switching performance thanks to the
extra driving source pin
• Easy to drive
• 100% avalanche tested
Figure 1. Internal schematic diagram
Drain(1)
Gate(4)
Applications
• High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Description
Driver
source(3)
Power
source(2)
AM10177v1
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STW69N65M5-4
Table 1. Device summary
Marking
Package
69N65M5
TO247-4
Packaging
Tube
January 2014
This is information on a product in full production.
DocID024925 Rev 2
1/13
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