STW65N80K5 Datasheet, PDF (1/12 Pages) STMicroelectronics – Ultra low gate charge

STW65N80K5
N-channel 800 V, 0.07 Ω typ., 46 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STW65N80K5 800 V 0.08 Ω 46 A 446 W
 Industry’s lowest RDS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STW65N80K5
Table 1: Device summary
Marking
Package
65N80K5
TO-247
Packing
Tube
October 2015
DocID027717 Rev 2
This is information on a product in full production.
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