STW65N65DM2AG Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STW65N65DM2AG
Automotive-grade N-channel 650 V, 0.042 Ω typ., 60 A
Power MOSFET MDmesh™ DM2 in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW65N65DM2AG
VDS
650 V
RDS(on)
max.
0.05 Ω
ID
PTOT
60 A 446 W
• Designed for automotive applications and
AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q_rr)
and time (t_rr) combined with low R_DS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW65N65DM2AG
Table 1: Device summary
Marking
65N65DM2
Package
TO-247
Packing
Tube
August 2015
DocID028164 Rev 1
This is information on a product in full production.
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