STW60NM50N Datasheet, PDF (1/13 Pages) STMicroelectronics – Low input capacitance and gate charge

STW60NM50N
N-channel 500 V, 0.035 Ω, 68 A, MDmesh™ II Power MOSFET
in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Order code V_DSS (@T_jmax) R_{DS(on) max} I_D
STW60NM50N
550 V
<0.043 Ω 68 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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Order codes
STW60NM50N
Table 1. Device summary
Marking
Packages
60NM50N
TO-247
Packaging
Tube
April 2013
This is information on a product in full production.
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