STW5NA90 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

TYPE
ST W5NA90
ST H5NA90F I
STW5NA90
STH5NA90FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
V_DSS
900 V
900 V
R_DS(on)
< 2.5 Ω
< 2.5 Ω
I_D
5.3 A
3.5 A
PRELIMINARY DATA
s TYPICAL R_DS(on) = 2.1 Ω
s ± 30 V GATE-TO-SOURCE VOLTAGE
RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s GATE CHARGE MINIMISED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
3
2
1
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V_DGR Drain- gate Volt age (R_GS = 20 kΩ)
V_GS Gate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
V_ISO Insulation Withstand Voltage (DC)
Tstg Storage T emperat ure
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
V alu e
STW5NA90 STH5NA90FI
900
900
± 30
5.3
3.5
3.4
2.2
21.2
21.2
150
60
1.2
0 .4 8

4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /^o C
V
o_C
o_C
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