STW58N65DM2AG Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STW58N65DM2AG
Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
STW58N65DM2AG
VDS
650 V
RDS(on) max.
0.065 Ω
ID
48 A
PTOT
360 W
 Designed for automotive applications and
AEC-Q101 qualified
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW58N65DM2AG
Table 1: Device summary
Marking
58N65DM2
Package
TO-247
Packing
Tube
September 2015
DocID028347 Rev 2
This is information on a product in full production.
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