STW58N60DM2AG Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STW58N60DM2AG
Automotive-grade N-channel 600 V, 0.052 Ω typ., 50 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code
STW58N60DM2AG
V_DS
600 V
R_DS(on)
max.
0.060 Ω
I_D
50 A
P_TOT
360 W
3
2
1
TO-247
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM15572v1_no_tab
 Designed for automotive applications and
AEC-Q101 qualified
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q_rr)
and time (t_rr) combined with low R_DS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW58N60DM2AG
Table 1: Device summary
Marking
58N60DM2
Package
TO-247
Packing
Tube
July 2015
DocID027912 Rev 2
This is information on a product in full production.
1/12
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