STW57N65M5-4 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package

STW57N65M5-4
N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET
in a TO247-4 package
Datasheet − production data
2 ³⁴
1
TO247-4
Features
Order code V_DS @ T_Jmax
STW57N65M5-4
710 V
R_DS(on)
max
0.063 Ω
I_D
42 A
• Higher V_DS rating
• Higher dv/dt capability
• Excellent switching performance thanks to the
extra driving source pin
• Easy to drive
• 100% avalanche tested
Figure 1. Internal schematic diagram
D(1)
G(4)
Applications
• High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Driver
source(3)
S(2)
AM10177v1
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STW57N65M5-4
Table 1. Device summary
Marking
Package
57N65M5
TO247-4
Packaging
Tube
April 2013
This is information on a product in full production.
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