STW56NM60N Datasheet, PDF (1/11 Pages) STMicroelectronics – N-channel 600 V, 0.05 Ω, 45 A TO-247 MDmesh™ II Power MOSFET

Features
STW56NM60N
N-channel 600 V, 0.05 Ω, 45 A TO-247
MDmesh™ II Power MOSFET
Preliminary data
Order code
STW56NM60N
V_DSS
600 V
R_DS(on)
max
< 0.06 Ω
I_D
45 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order code
STW56NM60N
Marking
56NM60N
3
!-V
Package
TO-247
Packaging
Tube
July 2011
Doc ID 15723 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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