STW56N65M2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge

STW56N65M2
N-channel 650 V, 0.049 Ω typ., 49 A MDmesh™ M2
Power MOSFET in a TO-247 package
Datasheet - production data



72
Features
Order code
STW56N65M2
V_DS
650 V
R_DS(on) max I_D
0.062 Ω 49 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
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$0Y
Order code
STW56N65M2
Table 1. Device summary
Marking
Package
56N65M2
TO-247
Packaging
Tube
December 2014
This is information on a product in full production.
DocID027285 Rev 1
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