STW56N65DM2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Fast-recovery body diode

STW56N65DM2
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS
STW56N65DM2 650 V
RDS(on)
max.
0.065 Ω
ID
PTOT
48 A 360 W
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW56N65DM2
Table 1: Device summary
Marking
56N65DM2
Package
TO-247
Packing
Tube
September 2015
DocID027142 Rev 2
This is information on a product in full production.
1/12
www.st.com