STW56N60M2-4 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge

STW56N60M2-4
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh™ M2
Power MOSFET in a TO247-4 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STW56N60M2-4
VDS @ TJmax
650 V
RDS(on) max
0.055 Ω
ID
52 A
 Excellent switching performance thanks to
the extra driving source pin
 Extremely low gate charge
 Excellent output capacitance (Coss) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STW56N60M2-4
Table 1: Device summary
Marking
Package
56N60M2
TO247-4
Packaging
Tube
January 2015
DocID026751 Rev 3
This is information on a product in full production.
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