STW56N60DM2 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely high dv/dt ruggedness

STW56N60DM2
N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code VDS
STW56N60DM2 600 V
RDS(on)
max.
0.060 Ω
ID
50 A
PTOT
360 W
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Q_rr)
and time (t_rr) combined with low R_DS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
S(3)
Order code
STW56N60DM2
AM15572v1_no_tab
Table 1: Device summary
Marking
56N60DM2
Package
TO-247
Packing
Tube
June 2015
DocID026982 Rev 3
This is information on a product in full production.
1/12
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