STW55NM60ND Datasheet, PDF (1/9 Pages) STMicroelectronics – N-channel 600 V - 0.047 Ω - 51 A TO-247 FDmesh™ II Power MOSFET (with fast diode)

Features
STW55NM60ND
N-channel 600 V - 0.047 Ω - 51 A TO-247
FDmesh™ II Power MOSFET (with fast diode)
Preliminary Data
Type
V_DSS R_DS(on)
I_D
Pw
STW55NM60ND 600 V < 0.060 Ω 51 A 350 W
■ The worldwide best R_DS(on) amongst the fast
recovery diode devices in TO-247
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STW55NM60ND
55NM60ND
Package
TO-247
Packaging
Tube
November 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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