STW55NM60N Datasheet, PDF (1/12 Pages) STMicroelectronics – Low input capacitance and gate charge

STW55NM60N
N-channel 600 V, 0.047 Ω, 51 A, MDmesh™ II Power MOSFET
TO-247
Features
Type
STW55NM60N
V_DSS
(@Tjmax)
650 V
R_DS(on)
max
< 0.060 Ω
I_D
51 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STW55NM60N
W55NM60N
Package
TO-247
Packaging
Tube
July 2008
Rev 4
1/12
www.st.com
12