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STW55NE10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 100V - 0.021ohm - 55A - TO247 STripFET POWER MOSFET | |||
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STW55NE10
N - CHANNEL 100V - 0.021⦠- 55A - TO247
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(on)
STW 55NE10
100 V <0.027 â¦
s TYPICAL RDS(on) = 0.021 â¦
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
ID
55 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
23
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kâ¦)
VGS
ID
ID
IDM (â¢)
Ptot
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
January 1999
Va l u e
Un it
100
V
100
V
± 20
V
55
A
35
A
220
A
180
W
1.2
W /o C
9
V/ns
-65 to 175
oC
175
oC
( 1) ISD ⤠55 A, di/dt ⤠300 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
1/8
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