STW54NM65N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 650 V, 0.054 OHM, 50 A MDmesh II Power MOSFET

STW54NM65N
N-channel 650 V, 0.054 Ω, 50 A MDmesh™ II Power MOSFET
TO-247
Features
Type
STW54NM65N
V_DSS
(@Tjmax)
710 V
R_DS(on)
max
< 0.065 Ω
I_D
50 A
■ 100% avalanche tested
3
■ Low input capacitance and gate charge
2
■ Low gate input resistance
t(s) Application
uc _{■ Switching applications}
rod _Description
te ^{P This series of devices is designed using the}
le ^{second generation of MDmesh™ technology. This}
revolutionary Power MOSFET associates a new
so vertical structure to the STMicroelectronics’ strip
b _{layout to yield one of the world’s lowest on-}
O resistance and gate charge. It is therefore suitable
- _{for the most demanding high efficiency}
) _converters.
1
TO-247
Figure 1. Internal schematic diagram
lete ^Product(s _{Table 1. Device summary}
so_{Order code}
Ob STW54NM65N
Marking
54NM65N
Package
TO-247
Packaging
Tube
January 2009
Rev 2
1/12
www.st.com
12