STW50NB20 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET

®
STW50NB20
N - CHANNEL 200V - 0.047Ω - 50A - TO-247
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
S TW 50NB 20
200 V < 0.055 Ω 50 A
s TYPICAL RDS(on) = 0.047 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage technology,
STMicroelectronics has designed an advanced
family of power Mosfets with outstanding
performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
V_GS
I_D
I_D
I_DM(•)
P_tot
Drain- gat e Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating F actor
dv/dt( 1) Peak Diode Recovery voltage slope
T_{s tg} Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
October 1999
Va l u e
Un it
200
V
200
V
± 30
V
50
A
32
A
200
A
280
2.24
W
W /^o C
4
V/ns
-65 to 150
o_C
150
o_C
( 1) ISD ≤ 50 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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