STW50N10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STW50N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
ST W50N10
V _DSS
100 V
R_DS(on)
< 0.035 Ω
I_D
50 A
s TYPICAL RDS(on) = 0.027 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
VD GR
VGS
ID
I_D
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
T_stg St orage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
Value
Uni t
100
V
100
V
± 20
V
50
A
35
A
200
A
180
W
1.2
W/^oC
-65 to 175
o_C
175
o_C
ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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