STW48NM60N Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package

STW48NM60N
N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET
in a TO-247 package
Datasheet — production data
Features
Order codes
STW48NM60N
V_DSS @
T_Jmax
650 V
R_DS(on)
max
< 0.07 Ω
I_D
44 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
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Table 1. Device summary
Order code
Marking
STW48NM60N
48NM60N
Package
TO-247
Packaging
Tube
February 2013
This is information on a product in full production.
Doc ID 18313 Rev 5
1/13
www.st.com
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