STW48N60M2-4 Datasheet, PDF (1/12 Pages) STMicroelectronics – Extremely low gate charge

STW48N60M2-4
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2
Power MOSFET in a TO247-4 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STW48N60M2-4
VDS @ TJmax.
650 V
RDS(on)max.
0.07 Ω
ID
42 A
 Excellent switching performance thanks to
the extra driving source pin
 Extremely low gate charge
 Excellent output capacitance (Coss) profile
 100% avalanche tested
 Zener-protected
Applications
 High efficiency switching applications:
 Servers
 PV inverters
 Telecom infrastructure
 Multi kW battery chargers
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STW48N60M2-4
Table 1: Device summary
Marking
48N60M2
Package
TO247-4
Packing
Tube
January 2017
DocID026750 Rev 3
This is information on a product in full production.
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